دیتاشیت SI8220BB-D-ISR
مشخصات دیتاشیت
| نام دیتاشیت |
SI8220/21
|
| حجم فایل |
1546.047
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
31
|
مشخصات
-
RoHS:
true
-
Feature:
-
-
Category:
Power Supply Chip/Gate Drive ICs
-
Datasheet:
SILICON LABS SI8220BB-D-ISR
-
Fall Time:
20ns
-
Load Type:
IGBT;MOSFET
-
Rise Time:
20ns
-
Supply Voltage:
6.5V~24V
-
Number of Drivers:
1
-
Driven Configuration:
-
-
Operating Temperature:
-40°C~+125°C@(Ta)
-
Whether the isolation:
Non-Insulated
-
Propagation Delay tpHL:
40ns
-
Propagation Delay tpLH:
60ns
-
Peak Output Current(sink):
-
-
Peak Output Current(source):
-
-
Package:
SOP-8
-
Manufacturer:
SILICON LABS
-
Package / Case:
8-SOIC (0.154", 3.90mm Width)
-
Rise / Fall Time (Typ):
20ns, 20ns (Max)
-
Number of Channels:
1
-
Approval Agency:
CQC, CSA, UR, VDE
-
Pulse Width Distortion (Max):
-
-
Technology:
Capacitive Coupling
-
Voltage - Forward (Vf) (Typ):
2.5V (Max)
-
Current - Peak Output:
2.5A
-
Series:
Automotive, AEC-Q100
-
Voltage - Output Supply:
9.4V ~ 24V
-
Common Mode Transient Immunity (Min):
30kV/µs (Typ)
-
Current - DC Forward (If) (Max):
30mA
-
Current - Output High, Low:
1.5A, 2.5A
-
Propagation Delay tpLH / tpHL (Max):
60ns, 40ns
-
Part Status:
Active
-
Voltage - Isolation:
2500Vrms
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
8-SOIC
-
Packaging:
Cut Tape (CT)
-
detail:
2.5A Gate Driver Capacitive Coupling 2500Vrms 1 Channel 8-SOIC
